Reference : Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength |
Scientific congresses, symposiums and conference proceedings : Paper published in a journal | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20675 | |||
Optoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength | |
English | |
Marso, Michel ![]() | |
Fox, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany] | |
Förster, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany] | |
Schimpf, K. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany] | |
Kordos, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany] | |
1997 | |
Proceedings of 3rd Asia-Pacific Conference on Communications, Sydney, Australia | |
546-550 | |
No | |
3rd Asia-Pacific Conference on Communications, Sydney, Australia | |
2007 | |
http://hdl.handle.net/10993/20675 |
There is no file associated with this reference.
All documents in ORBilu are protected by a user license.