[en] The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014fF/um2, determined from microwave measurements. The device bandwidth is RC limited.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-292
Auteur, co-auteur :
Kordoš, P.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Förster, A.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
MARSO, Michel ; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Rüders, F.; Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs
