550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs

Reference : 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20674

Title :	550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs
Language :	English
Author, co-author :	Kordoš, P. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Förster, A. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
	Rüders, F. [Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	1998
Journal title :	Electronics Letters
Publisher :	Institution of Engineering & Technology
Volume :	34
Issue/season :	1998
Pages :	119-120
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0013-5194
Abstract :	[en] The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014fF/um2, determined from microwave measurements. The device bandwidth is RC limited.
Permalink :	http://hdl.handle.net/10993/20674

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