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Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses
Marso, Michel; Gersdorf, P.; Fox, A. et al.
1998In Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO)
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-394
Author, co-author :
Marso, Michel ;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Gersdorf, P.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Hodel, U.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Investigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses
Publication date :
1998
Event name :
6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO)
Event date :
2008
Main work title :
Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO)
ISBN/EAN :
0-7803-4333-6
Pages :
105-110
Available on ORBilu :
since 29 March 2015

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