Optoelectronic D.C. and R.F. behavior of InP/InGaAs Based HEMTs

Marso, Michel; Horstmann, M.; Hardtdegen, H.; Kordoš, P.

doi:10.1016/S0038-1101(97)00228-1

Request a copy

Article (Scientific journals)

Optoelectronic D.C. and R.F. behavior of InP/InGaAs Based HEMTs

Marso, Michel; Horstmann, M.; Hardtdegen, H. et al.

1998 • In Solid-State Electronics, 42 (1998), p. 197-200

Peer Reviewed verified by ORBi

Permalink
https://hdl.handle.net/10993/20658

DOI
10.1016/S0038-1101(97)00228-1

Files (1)Send to Details Statistics Bibliography Similar publications

Files

Full Text

048_SSE_42_1998_197_200.pdf

Publisher postprint (295.6 kB)

Request a copy

All documents in ORBilu are protected by a user license.

Send to

RIS BibTex APA Chicago Permalink X Linkedin

Details

Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-ARTICLE-2009-355

Author, co-author :

Marso, Michel ; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

Horstmann, M.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

Hardtdegen, H.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

Kordoš, P.; Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Optoelectronic D.C. and R.F. behavior of InP/InGaAs Based HEMTs

Publication date :

1998

Journal title :

Solid-State Electronics

ISSN :

0038-1101

Publisher :

Pergamon Press - An Imprint of Elsevier Science

Volume :

Issue :

1998

Pages :

197-200

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBilu :

since 29 March 2015

Statistics

Number of views

26 (0 by Unilu)

Number of downloads

0 (0 by Unilu)

More statistics

Scopus citations^®

Scopus citations^®
without self-citations

WoS citations^™