Reference : A Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver, |
Scientific congresses, symposiums and conference proceedings : Paper published in a journal | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20650 | |||
A Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver, | |
English | |
Hodel, U. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Orzati, A. [a) Electromagnetic Fields and Microwave Electronics Laboratory, Swiss Federal Institute of Technology, CH-8092 Zurich] | |
Marso, Michel ![]() | |
Homan, O. [a) Electromagnetic Fields and Microwave Electronics Laboratory, Swiss Federal Institute of Technology, CH-8092 Zurich] | |
Fox, A. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Hart, A. V D [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Förster, A. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany] | |
2000 | |
Proceedings of 2000 Int. Conf. Indium Phosphide and Related Materials | |
466 | |
No | |
2000 Int. Conf. Indium Phosphide and Related Materials | |
2000 | |
http://hdl.handle.net/10993/20650 |
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