A Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver,

Reference : A Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver,


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20650

Title :	A Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver,
Language :	English
Author, co-author :	Hodel, U. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Orzati, A. [a) Electromagnetic Fields and Microwave Electronics Laboratory, Swiss Federal Institute of Technology, CH-8092 Zurich]
	Marso, Michel [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Homan, O. [a) Electromagnetic Fields and Microwave Electronics Laboratory, Swiss Federal Institute of Technology, CH-8092 Zurich]
	Fox, A. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Hart, A. V D [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Förster, A. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
	Lüth, H. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Publication date :	2000
Journal title :	Proceedings of 2000 Int. Conf. Indium Phosphide and Related Materials
Pages :	466
Peer reviewed :	No
Event name :	2000 Int. Conf. Indium Phosphide and Related Materials
Event date :	2000
Permalink :	http://hdl.handle.net/10993/20650

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