Material and Device Issues of GaN-based HEMTs

Reference : Material and Device Issues of GaN-based HEMTs


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20648

Title :	Material and Device Issues of GaN-based HEMTs
Language :	English
Author, co-author :	Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
	Alam, A. [AIXTRON AG, D-52072 Aachen, Germany]
	Betko, J. [> >]
	Chow, P. P. [> >]
	Heuken, M. [AIXTRON AG, D-52072 Aachen, Germany]
	Javorka, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
	Kočan, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany]
	Marso, Michel [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
	Morvic, M. [> >]
	van Hove, J. M. [> >]
Publication date :	2000
Main document title :	Proceedings of the 8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO),
Pages :	61-66
Peer reviewed :	No
Event name :	8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO),
Event date :	2000
Permalink :	http://hdl.handle.net/10993/20648

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