Reference : Material and Device Issues of GaN-based HEMTs |
Scientific congresses, symposiums and conference proceedings : Paper published in a book | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20648 | |||
Material and Device Issues of GaN-based HEMTs | |
English | |
Kordoš, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany] | |
Alam, A. [AIXTRON AG, D-52072 Aachen, Germany] | |
Betko, J. [> >] | |
Chow, P. P. [> >] | |
Heuken, M. [AIXTRON AG, D-52072 Aachen, Germany] | |
Javorka, P. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany] | |
Kočan, M. [Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany] | |
Marso, Michel ![]() | |
Morvic, M. [> >] | |
van Hove, J. M. [> >] | |
2000 | |
Proceedings of the 8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), | |
61-66 | |
No | |
8th International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), | |
2000 | |
http://hdl.handle.net/10993/20648 |
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