Reference : Fabrication of Laterally Displaced Porous Silicon Filters
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20638
Fabrication of Laterally Displaced Porous Silicon Filters
English
Marso, Michel mailto [Institut fuer Schicht- und Ionentechnik, Forschungzentrum Juelich GmbH, Postfach 1913, D-52425 Juelich, Germany]
Wolter, M. [Institut fuer Schicht- und Ionentechnik, Forschungzentrum Juelich GmbH, Postfach 1913, D-52425 Juelich, Germany]
Arens-Fischer, R. [Institut fuer Schicht- und Ionentechnik, Forschungzentrum Juelich GmbH, Postfach 1913, D-52425 Juelich, Germany]
Lüth, H. [Institut fuer Schicht- und Ionentechnik, Forschungzentrum Juelich GmbH, Postfach 1913, D-52425 Juelich, Germany]
2001
Thin Solid Films
Elsevier Science
382
2001
218-221
Yes (verified by ORBilu)
0040-6090
[en] Porous silicon ; Dielectric filters ; Patterning ; Reactive ion etching ; Micro-optics ; Filter array
[en] Porous silicon superlattices have been used to manufacture laterally displaced dielectric filters with different optical properties on one substrate. Two different fabrication processes for two-colour microfilter arrays are presented. Both methods overcome the problem of non-uniform optical properties of the well-known procedure where two filter stacks are grown one upon another, with subsequent partial removal of the upper filter by reactive ion etching. The novel methods give uniform optical properties of the two filter areas, profiting from the main property of the formation process of porous silicon: the formation of porous silicon occurs only at the porous silicon substrate interface.
http://hdl.handle.net/10993/20638

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