[en] Fabrication and characterisation of metal-semiconductor-metal (MSM) diodes above an AlGaN/GaN HEMT layer system for varactor applications are reported. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. Capacitancevoltage measurements exhibit CMAX/CMIN ratios up to 100, tunable by the electrode geometry. These results exceed best values for published heterostructure varactor diodes. Fabrication of AlGaN/GaN HEMTs on the same layer system with identical technology prove the potential for monolithic integration.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-299
Auteur, co-auteur :
MARSO, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Wolter, M.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
AlGaN/GaN Varactor Diode for Integration in HEMT Circuits
