[en] AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices with 0.3 mm gate length exhibit a saturation current of 0.82 A/mm, a good pinch-off and a peak extrinsic transconductance of 110 mS/mm. Highest saturation current reported so far and static output characteristics up to 20 V demonstrate that the devices are capable of handling 16 W/mm of static heat dissipation without any degradation of their performance.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-297
Auteur, co-auteur :
Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Alam, A.; AIXTRON AG, D-52072 Aachen, Germany
Nastase, N.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
MARSO, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Hardtdegen, H.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Heuken, M.; AIXTRON AG, D-52072 Aachen, Germany
Lüth, H.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
