Article (Scientific journals)
AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology
Marso, Michel; Javorka, P.; Alam, A. et al.
2001In Physica Status Solidi A. Applied Research, 188, p. 199-202
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Abstract :
[en] The electrical characterization of epitaxially grown HEMT layer systems for device fabrication is commonly performed by Hall measurements. However, the ultimate characterization of a HEMT layer system is the transistor device itself. The RoundHEMT concept meets the need for a device technology with few fabrication steps that allows a fast feedback to epitaxy while providing an evaluation of important electrical and also processing data. Even though nearly identical Hall data on structures with different thickness and doping concentration of the AlGaN layers suggest similar device properties, the RoundHEMTs resolve remarkable differences in device performance. The best layer structure was used to fabricate HEMTs with IDS = 700 mA/mm, fT = 35 GHz, and fmax = 70 GHz for LG = 0.2 mm.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-294
Author, co-author :
Marso, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Alam, A.;  AIXTRON AG, Kackertstr. 15–17, D-52072 Aachen, Germany
Wolter, M.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Hardtdegen, H.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Heuken, M.;  AIXTRON AG, Kackertstr. 15–17, D-52072 Aachen, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Lüth, H.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology
Publication date :
2001
Journal title :
Physica Status Solidi A. Applied Research
ISSN :
1521-396X
Publisher :
Wiley-VCH, Berlin, Germany
Volume :
188
Pages :
199-202
Peer reviewed :
Peer Reviewed verified by ORBi
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