Reference : Vertical Double-Gate MOSFET Based on Epitaxial Growth |
Scientific congresses, symposiums and conference proceedings : Paper published in a journal | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20633 | |||
Vertical Double-Gate MOSFET Based on Epitaxial Growth | |
English | |
Moers, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Trellenkamp, St [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Vescan, L. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Marso, Michel ![]() | |
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
2001 | |
Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany | |
191-194 | |
No | |
31st European Solid State Devices Research Conference, Nürnberg, Germany | |
2001 | |
http://hdl.handle.net/10993/20633 |
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