Vertical Double-Gate MOSFET Based on Epitaxial Growth

Reference : Vertical Double-Gate MOSFET Based on Epitaxial Growth


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20633

Title :	Vertical Double-Gate MOSFET Based on Epitaxial Growth
Language :	English
Author, co-author :	Moers, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Trellenkamp, St [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Vescan, L. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	2001
Journal title :	Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany
Pages :	191-194
Peer reviewed :	No
Event name :	31st European Solid State Devices Research Conference, Nürnberg, Germany
Event date :	2001
Permalink :	http://hdl.handle.net/10993/20633

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