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Vertical Double-Gate MOSFET Based on Epitaxial Growth
Moers, J.; Trellenkamp, St; Vescan, L. et al.
2001In Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany, p. 191-194
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-429
Author, co-author :
Moers, J.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Trellenkamp, St;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Vescan, L.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Lüth, H.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
Vertical Double-Gate MOSFET Based on Epitaxial Growth
Publication date :
2001
Event name :
31st European Solid State Devices Research Conference, Nürnberg, Germany
Event date :
2001
Journal title :
Proceedings of the 31st European Solid State Devices Research Conference, Nürnberg, Germany
Pages :
191-194
Available on ORBilu :
since 28 March 2015

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