Low-temperature-grown MBE GaAs for terahertz photomixers

Reference : Low-temperature-grown MBE GaAs for terahertz photomixers


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20630

Title :	Low-temperature-grown MBE GaAs for terahertz photomixers
Language :	English
Author, co-author :	Mikulics, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Buca, D. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Förster, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	2001
Journal title :	EDMO
Peer reviewed :	No
Event name :	EDMO
Event date :	2001
Permalink :	http://hdl.handle.net/10993/20630

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