[en] The influence of annealing on properties of Pt Schottky contacts deposited on the electron cyclotron resonance plasma etched surface of an AlGaN/GaN heterostructure has been investigated. It is found that rapid thermal annealing (450 ◦C and 40 s in nitrogen gas), performed after metal deposition, allows for the preparation of Schottky contacts with similar or better properties than those obtained on a non-etched surface. This procedure is suitable for the realization of recessed high-quality Schottky contacts of AlGaN/GaN HEMTs.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-300
Auteur, co-auteur :
Kuzmík, J.; Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravska cesta 9, 842 39 Bratislava, Slovak Republic
Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany
MARSO, Michel ; Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany
Kordoš; Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany
Co-auteurs externes :
yes
Langue du document :
Anglais
Titre :
Annealing of Schottky contacts deposited on dry etched AlGaN/GaN,
