[en] AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and fmax/fT=0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling 16 W/mm static heat dissipation.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-295
Author, co-author :
Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Alam, A.; AIXTRON AG, D-52072 Aachen, Germany
Wolter, M.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Heuken, M.; AIXTRON AG, D-52072 Aachen, Germany
Lüth, H.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany