Article (Scientific journals)
AlGaN/GaN HEMTs on (111) Silicon Substrates
Javorka, P.; Alam, A.; Wolter, M. et al.
2002In IEEE Electron Device Letters, 23 (2002), p. 4-6
Peer reviewed
 

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Keywords :
GaN; MODFETs; semiconductor device fabrication; silicon
Abstract :
[en] AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and fmax/fT=0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling 16 W/mm static heat dissipation.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-295
Author, co-author :
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Alam, A.;  AIXTRON AG, D-52072 Aachen, Germany
Wolter, M.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Heuken, M.;  AIXTRON AG, D-52072 Aachen, Germany
Lüth, H.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
AlGaN/GaN HEMTs on (111) Silicon Substrates
Publication date :
2002
Journal title :
IEEE Electron Device Letters
ISSN :
0741-3106
Publisher :
IEEE, Piscataway, United States - New Jersey
Volume :
23
Issue :
2002
Pages :
4-6
Peer reviewed :
Peer reviewed
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