Reference : RF small-signal and power characterization of AlGaN/GaN HEMTs |
Scientific congresses, symposiums and conference proceedings : Paper published in a book | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20622 | |||
RF small-signal and power characterization of AlGaN/GaN HEMTs | |
English | |
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Marso, Michel ![]() | |
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
2002 | |
, Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems | |
291-294 (2002) | |
No | |
0-7803-7276-X | |
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems | |
2002 | |
http://hdl.handle.net/10993/20622 | |
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems |
There is no file associated with this reference.
All documents in ORBilu are protected by a user license.