RF small-signal and power characterization of AlGaN/GaN HEMTs

Reference : RF small-signal and power characterization of AlGaN/GaN HEMTs


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20622

Title :	RF small-signal and power characterization of AlGaN/GaN HEMTs
Language :	English
Author, co-author :	Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	2002
Main document title :	, Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
Pages :	291-294 (2002)
Peer reviewed :	No
ISBN :	0-7803-7276-X
Event name :	4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
Event date :	2002
Permalink :	http://hdl.handle.net/10993/20622
Commentary :	4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

There is no file associated with this reference.

All documents in ORBi^lu are protected by a user license.