Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs

Wolter, M.; Javorka, P.; Marso, Michel; Carius, R.; Heuken, H.; Lüth, H.; Kordoš, P.

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Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs

Wolter, M.; Javorka, P.; Marso, Michel et al.

2002 • In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-CONFERENCE-2009-392

Author, co-author :

Wolter, M.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Marso, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Carius, R.; Institute of Photovoltaics, Research Centre Jülich, D-52425 Jülich, Germany

Heuken, H.; AIXTRON AG, D-52072 Aachen, Germany

Lüth, H.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

Kordoš, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

External co-authors :

yes

Language :

English

Title :

Investigation of current collapse in doped and undoped AlGaN/GaN HEMTs

Publication date :

2002

Event name :

4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

Event date :

2002

Main work title :

Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

ISBN/EAN :

0-7803-7276-X

Pages :

299-302 (2002)

Available on ORBilu :

since 26 March 2015

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Bibliography

P.B. Klein, J.A. Freitas, Jr., S.C. Binari and A.E. Wickenden, Appl. Phys. Lett. 75, 4016 (1999).
R. Vetury, N.Q. Zhang, S. Keller and U.K. Mishra, IEEE Trans. Electron. Devices 48, 560 (2001).
M. Wolter, P. Javorka, M. Marso, A. Fox, R. Carius, A. Alam, H. Heuken, H. Lüth and P. Kordoš, J. Electron. Mater., in press.
P.B. Klein, S.C. Binari, J.A. Freitas, Jr., and A.E. Wickenden, J. Appl. Phys. 88, 2843 (2000).