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High-performance AlGaN/GaN HEMTs on silicon substrates
Javorka, P.; Alam, A.; Fox, A. et al.
2002In Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-387
Author, co-author :
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Alam, A.;  AIXTRON AG, D-52072 Aachen, Germany
Fox, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
MARSO, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Heuken, M.;  AIXTRON AG, D-52072 Aachen, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
High-performance AlGaN/GaN HEMTs on silicon substrates
Publication date :
2002
Event name :
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
Event date :
2002
Main work title :
Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
ISBN/EAN :
0-7803-7276-X
Pages :
287-290 (2002)
Available on ORBilu :
since 26 March 2015

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