Reference : Investigation of AlGaN/GaN HEMTs on Si substrate using backgating
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20617
Investigation of AlGaN/GaN HEMTs on Si substrate using backgating
English
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Alam, A. [AIXTRON AG, Kackertstrasse 15–17, 52072 Aachen, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Heuken, M. [AIXTRON AG, Kackertstrasse 15–17, 52072 Aachen, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
2002
Physica Status Solidi C. Current Topics in Solid State Physics
Wiley-VCH Verlag
1
65-68
Yes (verified by ORBilu)
1862-6351
1610-1634
Weinheim
Germany
[en] The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN HEMT on silicon (111) substrate is investigated. This effect, known as backgating, is used to study traps that are located between substrate and 2DEG channel. The transient of the drain current after applying a negative substrate voltage is evaluated for measurements with and without illumination. Several trap contributions are resolved by measurements at different photon energies. A photocurrent is observed up to 600 nm wavelength. Up to this wavelength the backgating effect can be compensated and the drain current restored by a short light pulse. The experiments are performed on completed HEMTs, allowing investigation of the influence of device fabrication technology.
http://hdl.handle.net/10993/20617
10.1002/pssc.200390118

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