Investigation of AlGaN/GaN HEMTs on Si substrate using backgating

Marso, Michel; Wolter, M.; Javorka, P.; Alam, A.; Fox, A.; Heuken, M.; Kordoš, P.; Lüth, H.

doi:10.1002/pssc.200390118

Reference : Investigation of AlGaN/GaN HEMTs on Si substrate using backgating


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20617

Title :	Investigation of AlGaN/GaN HEMTs on Si substrate using backgating
Language :	English
Author, co-author :	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
	Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
	Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
	Alam, A. [AIXTRON AG, Kackertstrasse 15–17, 52072 Aachen, Germany]
	Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
	Heuken, M. [AIXTRON AG, Kackertstrasse 15–17, 52072 Aachen, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
	Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Publication date :	2002
Journal title :	Physica Status Solidi C. Current Topics in Solid State Physics
Publisher :	Wiley-VCH Verlag
Issue/season :	1
Pages :	65-68
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	1862-6351
e-ISSN :	1610-1634
City :	Weinheim
Country :	Germany
Abstract :	[en] The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN HEMT on silicon (111) substrate is investigated. This effect, known as backgating, is used to study traps that are located between substrate and 2DEG channel. The transient of the drain current after applying a negative substrate voltage is evaluated for measurements with and without illumination. Several trap contributions are resolved by measurements at different photon energies. A photocurrent is observed up to 600 nm wavelength. Up to this wavelength the backgating effect can be compensated and the drain current restored by a short light pulse. The experiments are performed on completed HEMTs, allowing investigation of the influence of device fabrication technology.
Permalink :	http://hdl.handle.net/10993/20617
DOI :	10.1002/pssc.200390118

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