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Paper published in a book (Scientific congresses, symposiums and conference proceedings)
MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application
Marso, Michel; Bernát, J.; Wolter, M. et al.
2002 • In , Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
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https://hdl.handle.net/10993/20614
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-403
Author, co-author :
Marso, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Bernát, J.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Wolter, M.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
External co-authors :
yes
Language :
English
Title :
MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application
Publication date :
2002
Event name :
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
Event date :
2002
Main work title :
, Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
ISBN/EAN :
0-7803-7276-X
Pages :
295-298
Commentary :
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

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