Reference : MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode App...
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20614
MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application
English
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Bernát, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2002
, Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
295-298
No
0-7803-7276-X
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
2002
http://hdl.handle.net/10993/20614
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

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