Reference : MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode App... |
Scientific congresses, symposiums and conference proceedings : Paper published in a book | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20614 | |||
MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application | |
English | |
Marso, Michel ![]() | |
Bernát, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] | |
2002 | |
, Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems | |
295-298 | |
No | |
0-7803-7276-X | |
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems | |
2002 | |
http://hdl.handle.net/10993/20614 | |
4th Intern. Conf. Advanced Semicon. Dev. & Microsystems |
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