MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application

Reference : MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode App...


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20614

Title :	MSM Diodes Based on an AlGaN/GaN HEMT Layer Structure for Varactor and Photodiode Application
Language :	English
Author, co-author :	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Bernát, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	2002
Main document title :	, Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
Pages :	295-298
Peer reviewed :	No
ISBN :	0-7803-7276-X
Event name :	4th Intern. Conf. Advanced Semicon. Dev. & Microsystems
Event date :	2002
Permalink :	http://hdl.handle.net/10993/20614
Commentary :	4th Intern. Conf. Advanced Semicon. Dev. & Microsystems

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