| Photoionization spectroscopy of traps in AlGaN/GaN HEMTs |
| English |
| Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] |
| Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] |
| Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] |
| Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] |
| Carius, R. [Institute of Photovoltaics, Research Centre Jülich, D-52425 Jülich, Germany] |
| Alam, A. [AIXTRON AG, D-52072 Aachen, Germany] |
| Heuken, H. [AIXTRON AG, D-52072 Aachen, Germany] |
| Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] |
| Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany] |
| 2002 |
| Journal of Electronic Materials |
| Springer Science & Business Media B.V. |
| 31 |
| 12 |
| 1321-1324 |
| Yes (verified by ORBilu) |
| 0361-5235 |
| [en] photo-ionization spectroscopy |
| http://hdl.handle.net/10993/20611 |