Photoionization spectroscopy of traps in AlGaN/GaN HEMTs

Reference : Photoionization spectroscopy of traps in AlGaN/GaN HEMTs


	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20611

Title :	Photoionization spectroscopy of traps in AlGaN/GaN HEMTs
Language :	English
Author, co-author :	Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Carius, R. [Institute of Photovoltaics, Research Centre Jülich, D-52425 Jülich, Germany]
	Alam, A. [AIXTRON AG, D-52072 Aachen, Germany]
	Heuken, H. [AIXTRON AG, D-52072 Aachen, Germany]
	Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Publication date :	2002
Journal title :	Journal of Electronic Materials
Publisher :	Springer Science & Business Media B.V.
Volume :	31
Issue/season :	12
Pages :	1321-1324
Peer reviewed :	Yes (verified by ORBi^lu)
ISSN :	0361-5235
Keywords :	[en] photo-ionization spectroscopy
Permalink :	http://hdl.handle.net/10993/20611

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