[en] The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN high electron mobility transistor ~HEMT! on silicon ~111! substrate is profited to investigate traps that are located between the substrate and the two-dimensional electron gas channel. The transient of the drain current after applying a negative substrate voltage is evaluated in the temperature range from 30 to 100 °C. With this method, known as backgating current deep level transient spectroscopy, majority carrier traps with activation energy of 200 meV as well as minority carrier traps at 370 meV are identified. The experiments are performed on completed HEMTs, allowing the investigation of the influence of device fabrication technology.
Disciplines :
Ingénierie électrique & électronique
Auteur, co-auteur :
MARSO, Michel ; Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany
Wolter, M.; Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany
Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany
Kordos, P.; Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany
Lüth, H.; Institute of Thin Films and Interfaces, Research Centre Juelich, D-52425 Juelich, Germany
Langue du document :
Anglais
Titre :
Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy
