[en] Different influence of SiO2 and Si3N4 passivation on performance of AlGaN=GaN=Si HEMTs is reported. DC characteristics are less enhanced by using SiO2 than Si3N4. This is in agreement with carrier concentration changes after passivation, as follows from Hall data. Small signal RF performance is degraded after applying SiO2 and enhanced after Si3N4 passivation, e.g. for unpassivated devices fTffi17 GHz which decreased to 9 GHz and increased to 28 GHz for SiO2 and Si3N4 respectively. The fmax=fT ratio has not changed after passivation.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-338
Auteur, co-auteur :
Javorka, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Bernát, J.; Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Fox, A.; Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
MARSO, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Luth, H.; Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Kordoš-, P.; Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Langue du document :
Anglais
Titre :
Influence of SiO/sub 2/ and Si/sub 3/N/sub 4/ passivation on AlGaN/GaN/Si HEMT performance,
