Reference : Influence of SiO/sub 2/ and Si/sub 3/N/sub 4/ passivation on AlGaN/GaN/Si HEMT perfor...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20590
Influence of SiO/sub 2/ and Si/sub 3/N/sub 4/ passivation on AlGaN/GaN/Si HEMT performance,
English
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Bernát, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Luth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš-, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
2003
Electronics Letters
Institution of Engineering & Technology
39
(2003)
1155-1157
Yes (verified by ORBilu)
0013-5194
[en] Different influence of SiO2 and Si3N4 passivation on performance of AlGaN=GaN=Si HEMTs is reported. DC characteristics are less enhanced by using SiO2 than Si3N4. This is in agreement with carrier concentration changes after passivation, as follows from Hall data. Small signal RF performance is degraded after applying SiO2 and enhanced after Si3N4 passivation, e.g. for unpassivated devices fTffi17 GHz which decreased to 9 GHz and increased to 28 GHz for SiO2 and Si3N4 respectively. The fmax=fT ratio has not changed after passivation.
http://hdl.handle.net/10993/20590
10.1049/el:20030748

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