Article (Scientific journals)
Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation,
Bernat, J.; Javorka, P.; Marso, Michel et al.
2003In Applied Physics Letters, 83 ((2003)), p. 5455
Peer reviewed
 

Files


Full Text
105_APL_83_2003_5455_5457.pdf
Publisher postprint (47.95 kB)
Request a copy

All documents in ORBilu are protected by a user license.

Send to



Details



Abstract :
[en] Conductivity and Hall effect measurements were performed before and after Si3N4 passivation of intentionally undoped and doped AlGaN/GaN heterostructures on Si and SiC substrates. An increase of the sheet carrier density ~up to ;30%! and a slight decrease of the electron mobility ~less than 10%! are found in all samples after passivation. The passivation induced sheet carrier density is 1.5– 231012 cm22 in undoped samples and only 0.731012 cm22 in 5–1031018 cm23 doped samples. The decrease of the electron mobility after passivation is slightly lower in highly doped samples. The channel conductivity in both types of unpassivated samples on Si and SiC substrates increases with an increase in doping density. After passivation, a well-resolved increase of channel conductivity is observed in the undoped or lightly doped samples and nearly the same channel conductivity results in the highly doped samples.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-308
Author, co-author :
Bernat, J.;  Institute of Thin Films and Interfaces (ISG-1), Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Javorka, P.;  Institute of Thin Films and Interfaces (ISG-1), Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Marso, Michel ;  Institute of Thin Films and Interfaces (ISG-1), Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Kordos, P.;  Institute of Thin Films and Interfaces (ISG-1), Research Centre Ju¨lich, D-52425 Ju¨lich, Germany
Language :
English
Title :
Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation,
Publication date :
2003
Journal title :
Applied Physics Letters
ISSN :
0003-6951
Publisher :
American Institute of Physics, Melville, United States - New York
Volume :
83
Issue :
(2003)
Pages :
5455
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 22 March 2015

Statistics


Number of views
50 (0 by Unilu)
Number of downloads
0 (0 by Unilu)

Scopus citations®
 
38
Scopus citations®
without self-citations
26
OpenCitations
 
31
WoS citations
 
38

Bibliography


Similar publications



Contact ORBilu