Reference : Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-impl...

	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20537

Title :	Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs,
Language :	English
Author, co-author :	Mikulics, M. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
	Stancek [Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia]
	Kovác [Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia]
	Zheng, X. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
	Wu, S. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
	Sobolewski, R. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
Publication date :	2003
Journal title :	Applied Physics Letters
Publisher :	American Institute of Physics
Volume :	83
Pages :	1719-1721
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	0003-6951
City :	Melville
Country :	NY
Abstract :	[en] We have fabricated and tested metal–semiconductor–metal ~MSM! photodetectors based on nitrogen-ion-implanted GaAs. Nitrogen ions with energy of 700 and 880 keV, respectively, were implanted into epitaxial GaAs films at an ion concentration of 331012 cm22. Ti/Au MSM photodetectors with 1-um-wide fingers were fabricated on top of the implanted GaAs. In comparison to low-temperature-grown GaAs photodetectors, produced in parallel in identical MSM geometry, the 880 keV N1-implanted photodetectors exhibited almost two orders of magnitude lower dark current ~10 nA at 1 V bias! and the responsivity more than doubled ~.20 mA/W at 20 V bias!. Illumination with 100-fs-wide, 810 nm wavelength laser pulses, generated ;2.5-ps-wide photoresponse signals with amplitudes as high as 2 V. The 2.5 ps relaxation time was the same for both the ion-implanted and low-temperature-grown devices and was limited by the MSM capacitance time constant.
Permalink :	http://hdl.handle.net/10993/20537

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