[en] Backgating effect as well as breakdown and high-current performance of AlGaN/GaN HEMTs on silicon substrates are studied. The material structure of investigated devices differ in the thickness of stressrelaxing intermediate layer sequence (~1 μm and ~2.5 μm thick). It is shown that the transistor backgating effect is reduced for the thicker sequence. Similarly, the reverse gate current is two orders of the magnitude lower and the gate-drain breakdown voltage increases substantially in devices with the thicker sequence. Increase from ~40 V to ~160 V of the HEMT blocking capability measured under electrostatic discharge-like conditions is also observed.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-372
Author, co-author :
Kuzmik, J.; Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, , A-1040 Vienna, Austria, On leave from IEE Slovak Academy of Sciences
Blaho, M.; Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
Pogany, D.; Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
Gornik, E.; Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
Alam, A.; AIXTRON AG, D-52072 Aachen, Germany
Dikme, Y.; AIXTRON AG, D-52072 Aachen, Germany
Heuken, M.; AIXTRON AG, D-52072 Aachen, Germany
Javorka, P.; Institute of Thin Films and Interfaces (ISG-1), Research Centre Juelich, D-52425, Germany
Marso, Michel ; Institute of Thin Films and Interfaces (ISG-1), Research Centre Juelich, D-52425, Germany
Kordoš, P.; Institute of Thin Films and Interfaces (ISG-1), Research Centre Juelich, D-52425, Germany
Language :
English
Title :
Backgating high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates
Publication date :
2003
Event name :
ESSDERC 2003. Estoril, Portugal
Event date :
2003
Journal title :
Proceedings of the ESSDERC 2003. Estoril, Portugal