Reference : Backgating high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon ...

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a journal
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20536

Title :	Backgating high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates
Language :	English
Author, co-author :	Kuzmik, J. [Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, , A-1040 Vienna, Austria, On leave from IEE Slovak Academy of Sciences]
	Blaho, M. [Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria]
	Pogany, D. [Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria]
	Gornik, E. [Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria]
	Alam, A. [AIXTRON AG, D-52072 Aachen, Germany]
	Dikme, Y. [AIXTRON AG, D-52072 Aachen, Germany]
	Heuken, M. [AIXTRON AG, D-52072 Aachen, Germany]
	Javorka, P. [Institute of Thin Films and Interfaces (ISG-1), Research Centre Juelich, D-52425, Germany]
	Marso, Michel [Institute of Thin Films and Interfaces (ISG-1), Research Centre Juelich, D-52425, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces (ISG-1), Research Centre Juelich, D-52425, Germany]
Publication date :	2003
Journal title :	Proceedings of the ESSDERC 2003. Estoril, Portugal
Pages :	319-322
Peer reviewed :	No
Event name :	ESSDERC 2003. Estoril, Portugal
Event date :	2003
Abstract :	[en] Backgating effect as well as breakdown and high-current performance of AlGaN/GaN HEMTs on silicon substrates are studied. The material structure of investigated devices differ in the thickness of stressrelaxing intermediate layer sequence (~1 μm and ~2.5 μm thick). It is shown that the transistor backgating effect is reduced for the thicker sequence. Similarly, the reverse gate current is two orders of the magnitude lower and the gate-drain breakdown voltage increases substantially in devices with the thicker sequence. Increase from ~40 V to ~160 V of the HEMT blocking capability measured under electrostatic discharge-like conditions is also observed.
Permalink :	http://hdl.handle.net/10993/20536

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