[en] The influence of a carrier supply layer on the electrical properties of MSM diodes based on AlGaN/GaN HEMT layer structures is investigated. The voltage dependence of the Schottky contact capacitance allows the use of the device as varactor diode with CMAX / CMIN ratios up to 17, tuneable by contact geometry. The carrier supply doping determines the sheet carrier density of the twodimensional electron gas channel, which is responsible for the transition voltage and the series resistance of the MSM diode. A device based on the highest doped layer structure shows a cutoff frequency as high as 65 GHz.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-CONFERENCE-2009-404
Auteur, co-auteur :
MARSO, Michel ; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Bernát, J.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Javorka, P.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Fox, A.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Wolter, M.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Kordoš, P.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Langue du document :
Anglais
Titre :
MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures
