Article (Scientific journals)
Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs,
Bernát, J.; Wolter, M.; Fox, A. et al.
2004In Electronics Letters, 40 (1), p. 78-80
Peer reviewed
 

Files


Full Text
107_EL_40_2004_78_80.pdf
Publisher postprint (71.61 kB)
Request a copy

All documents in ORBilu are protected by a user license.

Send to



Details



Abstract :
[en] The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to undoped counterpart is observed. This can be demonstrated by IDS of 0.86 and 1.33 A=mm, gm of 220 and 273 mS=mm, fT of 33 and 43 GHz and fmax of 54 and 61 GHz for 0.3 mm gate length devices on undoped and doped structures, respectively. The DC=pulsed I–V characteristics as well as power measurements show insignificant RF dispersion of HEMTs on doped structures. These results underline the advantage of doped layer structures for preparation of high-performance AlGaN=GaN HEMTs.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-330
Author, co-author :
Bernát, J.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Wolter, M.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
MARSO, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Flynn, J.;  ATMI Corporate, 7 Commerce Drive, Danbury, Connecticut 06810, USA
Brandes, G.;  ATMI Corporate, 7 Commerce Drive, Danbury, Connecticut 06810, USA
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Language :
English
Title :
Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs,
Publication date :
2004
Journal title :
Electronics Letters
ISSN :
0013-5194
Publisher :
Institution of Engineering and Technology
Volume :
40
Issue :
1
Pages :
78-80
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 20 March 2015

Statistics


Number of views
32 (0 by Unilu)
Number of downloads
0 (0 by Unilu)

Scopus citations®
 
21
Scopus citations®
without self-citations
7
OpenCitations
 
19
WoS citations
 
20

Bibliography


Similar publications



Contact ORBilu