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Article (Scientific journals)
Influence of layer structure on performance of AlGaN/GaN High Electron Mobility Transistors before and after passivation
Bernát, J.; Javorka, P.; Fox, A. et al.
2004 • In Journal of Electronic Materials, 33 ((2004)), p. 436-439
Peer reviewed
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https://hdl.handle.net/10993/20483
DOI
10.1007/s11664-004-0198-3
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-336
Author, co-author :
Bernát, J.;  Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich
Javorka, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany
Language :
English
Title :
Influence of layer structure on performance of AlGaN/GaN High Electron Mobility Transistors before and after passivation
Publication date :
2004
Journal title :
Journal of Electronic Materials
ISSN :
0361-5235
Publisher :
Springer Boston
Volume :
33
Issue :
(2004)
Pages :
436-439
Peer reviewed :
Peer reviewed
Additional URL :
http://www.springerlink.com/content/120165360732r626/
Available on ORBilu :
since 19 March 2015

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