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DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation
Bernát, J.; Marso, Michel; Fox, A. et al.
2004In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
 

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Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-CONFERENCE-2009-375
Author, co-author :
Bernát, J.;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Marso, Michel ;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Fox, A.;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Kordoš, P.;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Lüth, H.;  Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Language :
English
Title :
DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation
Publication date :
2004
Event name :
5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
Event date :
2004
Main work title :
Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
ISBN/EAN :
0-7803-8535-7
Pages :
139-142
Available on ORBilu :
since 19 March 2015

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