DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation

Reference : DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3...


	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20482

Title :	DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation
Language :	English
Author, co-author :	Bernát, J. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Fox, A. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Lüth, H. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Publication date :	2004
Main document title :	Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
Pages :	139-142
Peer reviewed :	No
ISBN :	0-7803-8535-7
Event name :	5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
Event date :	2004
Permalink :	http://hdl.handle.net/10993/20482

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