DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation

Bernát, J.; MARSO, Michel; Fox, A.; Kordoš, P.; Lüth, H.

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DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation

Bernát, J.; MARSO, Michel; Fox, A. et al.

2004 • In Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04

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Disciplines :

Electrical & electronics engineering

Identifiers :

UNILU:UL-CONFERENCE-2009-375

Author, co-author :

Bernát, J.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany

MARSO, Michel ; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany

Fox, A.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany

Kordoš, P.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany

Lüth, H.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany

Language :

English

Title :

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation

Publication date :

2004

Event name :

5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04

Event date :

2004

Main work title :

Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04

ISBN/EAN :

0-7803-8535-7

Pages :

139-142

Available on ORBilu :

since 19 March 2015

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Bibliography

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