Reference : DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3... |
Scientific congresses, symposiums and conference proceedings : Paper published in a book | |||
Engineering, computing & technology : Electrical & electronics engineering | |||
http://hdl.handle.net/10993/20482 | |||
DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 passivation | |
English | |
Bernát, J. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany] | |
Marso, Michel ![]() | |
Fox, A. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany] | |
Kordoš, P. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany] | |
Lüth, H. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany] | |
2004 | |
Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 | |
139-142 | |
No | |
0-7803-8535-7 | |
5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 | |
2004 | |
http://hdl.handle.net/10993/20482 |
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