[en] This paper reports on properties of intentionally undoped AlGaN/GaN/sapphire-based high electron mobility transistors (HEMTs) before and after passivation with SiO2 and Si3N4. Our results indicate that the DC performance of the AlGaN/GaN HEMTs improved significantly as the stress in the passivation layer increased from compressive to tensile. It corresponded to changes in the sheet carrier concentration. Unlike the DC properties, RF properties of the HEMTs were less sensitive to the stress.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-337
Auteur, co-auteur :
Gregusova, Dagmar; Institute of Electrical Engineering, Academy of Sciences, 84104 Bratislava, Slovakia
Bernát, J.; Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Drzik, M.; International Laser Center, 81219 Bratislava, Slovakia
MARSO, Michel ; Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
Novak, J.; Institute of Electrical Engineering, Academy of Sciences, 84104 Bratislava, Slovakia
Kordoš, P.; Institute of Electrical Engineering, Academy of Sciences, 84104 Bratislava, Slovakia, and Institute of Microelectronics, Slovak Technical University, 81219 Bratislava, Slovakia
Uherek, F.; International Laser Center, 81219 Bratislava, Slovakia
Langue du document :
Anglais
Titre :
Influence of passivation-induced stress on the performance of AlGaN/GaN HEMTs
Date de publication/diffusion :
2005
Titre du périodique :
Physica Status Solidi C. Current Topics in Solid State Physics
