[en] We demonstrate low-temperature (LT)-grown GaAs photodetectors transferred on flexible polyethylene terephthalate (PET) plastic substrates. The LT-GaAs layer was patterned into 20 20 m2 chips, which after placing on the PET substrates were integrated with coplanar strip transmission lines. The devices exhibit low dark currents ( 2 10 8 A), subpicosecond photoresponse time, and signal amplitudes up to 0.9 V at the bias voltage of 80 V and under laser beam excitation power of 8 mW at 810-nm wavelength. At the highest bias ( 80 V) level, an increase of the response time (up to 1.3 ps) was observed and attributed to the influence of heating effects due to low thermal conductivity of PET. Our LT-GaAs-on-PET photodetectors withstand hundredfold mechanical bending of the substrate and are intended for applications in hybrid optoelectronic circuits fabricated on noncrystalline substrates, in terahertz imaging, and in biology-related current-excitation tests.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-383
Author, co-author :
Mikulics, M.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Adam, R.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Marso, Michel ; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Forster, A.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Kordos, P.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Luth, H.; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Wu, S.; Department of Electrical and Computer Engineering, the Laboratory for Laser Energetics, University of Rochester, Rochester,NY14627-0231 USA, and also with the Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 USA
Zheng, X.; Department of Electrical and Computer Engineering, the Laboratory for Laser Energetics, University of Rochester, Rochester,NY14627-0231 USA
Sobolewski, R.; Department of Electrical and Computer Engineering, the Laboratory for Laser Energetics, University of Rochester, Rochester,NY14627-0231 USA, and also with the Institute of Physics, Polish Academy of Sciences, Warszawa PL-02668, Poland
Language :
English
Title :
Ultrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates
Publication date :
2005
Journal title :
IEEE Photonics Technology Letters
ISSN :
1041-1135
eISSN :
1941-0174
Publisher :
Institute of Electrical and Electronics Engineers, New York, United States - New York