Photomixers fabricated on nitrogen-ion-implanted GaAs
English
Mikulics, M.[Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany, and Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Marso, Michel[Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Cámara Mayorga, I.[Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany]
Güsten, R.[Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany]
Stanček, S.[Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia]
Kováč, P.[Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia]
Wu, S.[Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231]
Khafizov, M.[Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231]
Sobolewski, R.[Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231]
Wolter, M.[Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Buca, D.[Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Förster, A.[Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Kordoš, P.[Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Lüth, H.[Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Li, Xia[Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231]
[en] We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of 3 1012 cm−2. The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts photomixers fabricated on low-temperature-grown GaAs the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers.