[en] We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of 3 1012 cm−2. The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts photomixers fabricated on low-temperature-grown GaAs the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-364
Author, co-author :
Mikulics, M.; Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany, and Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany
Marso, Michel ; Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany
Cámara Mayorga, I.; Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany
Güsten, R.; Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany
Stanček, S.; Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia
Kováč, P.; Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia
Wu, S.; Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231
Khafizov, M.; Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231
Sobolewski, R.; Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231
Michael, E. A.
Schieder, R.
Wolter, M.; Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany
Buca, D.; Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany
Förster, A.; Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany
Kordoš, P.; Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany
Lüth, H.; Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany
Li, Xia; Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231
