[en] We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN 11-22 orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of 0002 . Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current 10−3 A/cm2 . These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-328
Author, co-author :
Mikulics, Martin; Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany, and Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany, and Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig, Germany
Kočan, Martin; IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany
Rizzi, Angela; IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany
Sofer, Zdenĕk; Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, Prague 6, Czech Republic
Stejskal, Josef; Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, Prague 6, Czech Republic
MARSO, Michel ; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Kordoš, Peter; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Lüth, Hans; Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Language :
English
Title :
Growth and properties of GaN and AlN layers on silver substrates
Publication date :
2005
Journal title :
Applied Physics Letters
ISSN :
0003-6951
Publisher :
American Institute of Physics, Melville, United States - New York
