[en] We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-384
Auteur, co-auteur :
Mikulics, M.; Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,
MARSO, Michel ; Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,
Javorka, P.; Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,
Kordoš, P.; Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,
Lüth, H.; Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich
Kočan, M.; IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany
Rizzi, A.; IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany
Wu, S.; Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester
Sobolewski, R.; Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester
Langue du document :
Anglais
Titre :
Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
