Title : Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN Language : English Author, co-author : Mikulics, M. [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,] Marso, Michel [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,] Javorka, P. [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,] Kordoš, P. [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,] Lüth, H. [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich] Kočan, M. [IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany] Rizzi, A. [IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany] Wu, S. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester] Sobolewski, R. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester] Publication date : 2005 Journal title : Applied Physics Letters Publisher : American Institute of Physics Volume : 86 Issue/season : 21 Pages : 211110 Peer reviewed : Yes (verified by ORBilu ) ISSN : 0003-6951 Abstract : [en] We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material.Permalink : http://hdl.handle.net/10993/20457 DOI : 10.1063/1.1938004 Other URL : http://adsabs.harvard.edu/abs/2005ApPhL..86u1110M 
[Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,]
