Reference : RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20421

Title :	RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs
Language :	English
Author, co-author :	Fox, A. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Marso, Michel [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Heidelberger, G. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Kordoš, P. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
Publication date :	2006
Main document title :	Proc. 6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06 (2006)
Peer reviewed :	No
Event name :	6th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’06
Event date :	2006
Abstract :	[en] An increased RF-Performance of heterojunction field-effect transistor was found to be due to passivation and in addition a SiO2 insulation underneath the gate metallization. This leads to an increase of cutoff frequency from 17 GHz up to 24 GHz for devices with 500 nm gate length. The RF output power increased from 4.1 to 6.7 W/mm at 7 GHz. RF simulation based on measured S-parameter showed a decrease of gate-source-capacitance and transconductance for devices with a dielectric layer underneath the gate metallization. The increase of the ratio gm/Cgs of about 25% is in agreement with the measured cutoff frequency ft.
Permalink :	http://hdl.handle.net/10993/20421

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