[en] An increased RF-Performance of heterojunction field-effect transistor was found to be due to passivation and in addition a SiO2 insulation underneath the gate metallization. This leads to an increase of cutoff frequency from 17 GHz up to 24 GHz for devices with 500 nm gate length. The RF output power increased from 4.1 to 6.7 W/mm at 7 GHz. RF simulation based on measured S-parameter showed a decrease of gate-source-capacitance and transconductance for devices with a dielectric layer underneath the gate metallization. The increase of the ratio gm/Cgs of about 25% is in agreement with the measured cutoff frequency ft.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-CONFERENCE-2009-418
Auteur, co-auteur :
Fox, A.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
MARSO, Michel ; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Heidelberger, G.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Kordoš, P.; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic
Langue du document :
Anglais
Titre :
RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs
J. Bernát, P. Javorka, A. Fox, M. Marso and P. Kordoš, "Influence of Layer Structure on Performance of AlGaN/High Electron Mobility Transistors before and after passivation. Journal of Electronic Materials, 33 (2004) 436
M. Marso, G. Heidelberger, M. Indlekofer, J. Bernat, A. Fox, P. Kordoš and H. Lüth, "Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs, IEEE Transactions on Electron Devices 53 (2006) 1517
P. Kordoš, G. Heidelberger, J. Bernat, A. Fox, M. Marso and H. Lüth, "High-Power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors, Applied Physics Letters, 87, 143501 (2005).
