Reference : GaN-nanowhiskers: MBE-growth conditions and optical properties

	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20407

Title :	GaN-nanowhiskers: MBE-growth conditions and optical properties
Language :	English
Author, co-author :	Meijers, R. [Institute of Thin Films and Interfaces (ISG1) and cni-Center of Nanoelectronic Systems for Information Technology, Research Centre Julich]
	Richter, T. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Calarco, R. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Stoica, T. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Bochem, H.-P. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Marso, Michel [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Lüth, H. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Publication date :	2006
Journal title :	Journal of Crystal Growth
Publisher :	Elsevier, Amsterdam, PAYS-BAS
Volume :	289
Issue/season :	1
Pages :	381-386
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	0022-0248
Abstract :	[en] Morphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy(MBE) have been studied in correlation with growth parameters. It was shown that the growth parameters can be tuned such that uniform, well separated and high-quality nanowhiskers are obtained. Using an optimized ramp of Ga beam equivalent pressure (BEP) during the growth, the tapering or coalescence of nanowhiskers can be suppressed. By increasing the growth temperature the density of nanowhiskers is reduced, but the crystalline quality is improved as can be concluded from cathodoluminescence (CL) results.
Permalink :	http://hdl.handle.net/10993/20407
DOI :	10.1016/j.jcrysgro.2005.11.117

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