[en] We have fabricated and characterized photomixers based on high energy nitrogen-ion-implanted GaAs. For material optimization and annealing dynamics in MSM photodetector structures, we used 400 keV implantation energy with an ion dose of 1´1016 cm-2. For photomixer structures we used 3 MeV energy to implant N+ ions into GaAs substrates, with an ion concentration dose of 3´1012 cm-2. The N+-implanted GaAs photomixers exhibit improved output power in comparison to their counterparts, photomixers fabricated on low-temperature-grown GaAs. The highest output power was 2.6 μW at 850 GHz and about 1 μW at 1 THz. No saturation of the output power with increased bias voltage and optical input power was observed. These characteristics make N+-implanted GaAs the material of choice for efficient high power sources of terahertz radiation.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-CONFERENCE-2009-425
Auteur, co-auteur :
Mikulics, M.; Institute of Bio and Nanosystems, Research Centre Jülich, D-52425 Jülich, Germany, and Institut für Hochfrequenztechnik, Technische Universität Braunschweig, D-38106 Braunschweig, Germany
MARSO, Michel ; Institute of Bio and Nanosystems, Research Centre Jülich, D-52425 Jülich, Germany
Stanček, S.; Slovak University of Technology, Department of Nuclear Physics and Technology, SK-81219 Bratislava, Slovak Republic
Michael, E. A.; 1. Physics Institute, University of Cologne, D-50937 Cologne, Germany
Kordoš, P.; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Institute of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic
Langue du document :
Anglais
Titre :
Terahertz-Radiation Photomixers on Nitrogen-Implanted GaAs, (2006) 117 - 120
