Reference : Defect Distribution along Single GaN Nanowhiskers

	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20373

Title :	Defect Distribution along Single GaN Nanowhiskers
Language :	English
Author, co-author :	Cavallini, Anna [Physics Department, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy]
	Polenta, Laura [Physics Department, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy]
	Rossi, Marco [Physics Department, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy]
	Richter, Thomas [Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julich]
	Marso, Michel [Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julich]
	Meijers, Ralph [Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julich]
	Calarco, Raffaella [Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julic]
	Lüth, Hans [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Publication date :	2006
Journal title :	Nano Letters
Publisher :	American Chemical Society
Volume :	6
Issue/season :	7
Pages :	1548-1551
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	1530-6984
e-ISSN :	1530-6992
Abstract :	[en] In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating that the defects responsible for such transitions are distributed inhomogeneously along the column growth direction.
Permalink :	http://hdl.handle.net/10993/20373
DOI :	10.1021/nl060332n
Other URL :	http://cat.inist.fr/?aModele=afficheN&cpsidt=17945750

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