Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric,
English
Heidelberger, G.[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Roeckerath, M.[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Steins, R.[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Stefaniak, M.[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Fox, A.[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Schubert, J.[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kaluza, N.[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, H.[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, P.[Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
[en] Starting out from our well established process for AlGaN/GaN HFETs we discuss ways to enrich the process in order to fabricate Metal-Oxide-Semiconductor HFETs (MOSHFETs) with a Gadolinium Scandate (GdScO3) insulation layer. In particular, adequate processing orders, various etching procedures and possible drawbacks of the GdScO3 deposition process on ohmic contacts are discussed. Making use of the gained knowledge we fabricated GdScO3-MOSHFETs for the first time. Compared to a conventional HFET the new device shows a higher saturation drain current and a lower gate leakage current. Nevertheless, the potential insulating properties of GdScO3 are not fully exploited yet and further optimization of the deposition process is needed.
[Institute of Bio- and Nanosystems and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
