Reference : Ultrafast and Highly-Sensitive Photodetectors with Recessed Electrodes Fabricated on ...

	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20368

Title :	Ultrafast and Highly-Sensitive Photodetectors with Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs
Language :	English
Author, co-author :	Mikulics, M. [Max-Plank-Institute for Radioastronomy, D-53121Bonn, Germany, and Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany, and Institut fuer Hochfrequenztechnik,Technische Universitaet Braunschweig, D-38106 Braunschweig,]
	Wu, S. [Department of Physics and Astronomy and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231 USA]
	Marso, Michel [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Adam, R. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Förster, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	van der Hart, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Lüth, H. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
	Sobolewski, Roman [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
Publication date :	2006
Journal title :	IEEE Photonics Technology Letters
Publisher :	Institute of Electrical and Electronics Engineers
Volume :	18 (2006)
Issue/season :	5-6
Pages :	820-822
Peer reviewed :	Yes
ISSN :	1041-1135
e-ISSN :	1941-0174
City :	New York
Country :	NY
Keywords :	[en] Low-temperature-grown GaAs ; recessed electrode structure ; ultrafast photodetectors
Abstract :	[en] We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to an improved electric-field distribution inside the photodetector structure and resulted in a 25% breakdown voltage and sensitivity increase with simultaneous four-fold reduction of capacitance, as compared to the identical MSM devices with planar electrodes. Time-resolved studies performed using 100-fs-duration laser pulses showed that recessed-electrode MSMs exhibited 1.0-ps-wide photoresponse transients with no slow after-pulse tails and their photoresponse time was 0.9 ps. The improved transient photoresponse parameters are the main advantages of the recessed-electrode geometry.
Permalink :	http://hdl.handle.net/10993/20368

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