Article (Scientific journals)
GaN and InN nanowires grown by MBE: A comparison
Calarco, Raffaella; Marso, Michel
2007In Applied Physics A : Materials Science & Processing, p. 499-503
Peer reviewed
 

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Abstract :
[en] Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was stressed. The nanowires crystalline quality has been investigated by means of their optical properties. A comparison of the transport characteristics was given. For each material a band schema was shown, which takes into account transport and optical features and is based on Fermi level pinning at the surface.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-325
Author, co-author :
Calarco, Raffaella;  Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Marso, Michel ;  Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Language :
English
Title :
GaN and InN nanowires grown by MBE: A comparison
Publication date :
2007
Journal title :
Applied Physics A : Materials Science & Processing
ISSN :
0947-8396
Publisher :
Springer Science & Business Media B.V., New York, United States - New York
Pages :
499-503
Peer reviewed :
Peer reviewed
Available on ORBilu :
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