Reference : Characterization of AlGaN/GaN MOSHFETs with Al2O3 as Gate Oxide,
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20273
Characterization of AlGaN/GaN MOSHFETs with Al2O3 as Gate Oxide,
English
Gregušová, D. [Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia]
Stoklas, R. [Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia]
Čičo, K. [Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia]
Heidelberger, G. [Institute of Bio- and Nanosystems, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Bio- and Nanosystems, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, P. [Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia, and Department of Microelectronics, Slovak Technical University, 81219 Bratislava, Slovakia]
Novák, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia]
2007
Physica Status Solidi C. Current Topics in Solid State Physics
Wiley-VCH Verlag
4 (2007)
2720-2723
Yes (verified by ORBilu)
1862-6351
1610-1634
Weinheim
Germany
[en] We report on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors
(MOSHFETs) with MOCVD deposited Al2O3 as a gate oxide. Properties of MOSHFETs with 9 nm and 14 nm thick Al2O3 are compared with conventional HFETs prepared simultaneously on the same layer structure. Lower gate leakage current (~10−5 A/mm at −10 V) and higher saturated drain current (up to 40%) are obtained for MOSHFETs than those for HFETs. In contradiction to previously reported data, the extrinsic transconductance for MOSHFETs is also higher (up to 37% of peak values) than that for HFET. This indicates on semi-conductive rather than insulating properties of Al2O3 gate oxide. Pulsed I−V measurements (pulse width 1 μs) yielded lower but still measurable current collapse in MOSHFETs compared to HFETs. Nevertheless, obtained results show that Al2O3 gate oxide, after optimising its microstructure and thickness, can be preferable for the preparation of AlGaN/GaN MOSHFETs.
http://hdl.handle.net/10993/20273
10.1002/pssc.200674828

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Limited access
154_pss_c_4_2007_2720-2723.pdfPublisher postprint1.78 MBRequest a copy

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.