Article (Scientific journals)
Characterization of AlGaN/GaN MOSHFETs with Al2O3 as Gate Oxide,
Gregušová, D.; Stoklas, R.; Čičo, K. et al.
2007In Physica Status Solidi C. Current Topics in Solid State Physics, 4 (2007), p. 2720-2723
Peer reviewed
 

Files


Full Text
154_pss_c_4_2007_2720-2723.pdf
Publisher postprint (1.82 MB)
Request a copy

All documents in ORBilu are protected by a user license.

Send to



Details



Abstract :
[en] We report on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with MOCVD deposited Al2O3 as a gate oxide. Properties of MOSHFETs with 9 nm and 14 nm thick Al2O3 are compared with conventional HFETs prepared simultaneously on the same layer structure. Lower gate leakage current (~10−5 A/mm at −10 V) and higher saturated drain current (up to 40%) are obtained for MOSHFETs than those for HFETs. In contradiction to previously reported data, the extrinsic transconductance for MOSHFETs is also higher (up to 37% of peak values) than that for HFET. This indicates on semi-conductive rather than insulating properties of Al2O3 gate oxide. Pulsed I−V measurements (pulse width 1 μs) yielded lower but still measurable current collapse in MOSHFETs compared to HFETs. Nevertheless, obtained results show that Al2O3 gate oxide, after optimising its microstructure and thickness, can be preferable for the preparation of AlGaN/GaN MOSHFETs.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-302
Author, co-author :
Gregušová, D.;  Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia
Stoklas, R.;  Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia
Čičo, K.;  Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia
Heidelberger, G.;  Institute of Bio- and Nanosystems, Research Centre Jülich, 52425 Jülich, Germany
Marso, Michel ;  Institute of Bio- and Nanosystems, Research Centre Jülich, 52425 Jülich, Germany
Kordoš, P.;  Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia, and Department of Microelectronics, Slovak Technical University, 81219 Bratislava, Slovakia
Novák, J.;  Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia
Language :
English
Title :
Characterization of AlGaN/GaN MOSHFETs with Al2O3 as Gate Oxide,
Publication date :
2007
Journal title :
Physica Status Solidi C. Current Topics in Solid State Physics
ISSN :
1862-6351
eISSN :
1610-1634
Publisher :
Wiley-VCH Verlag, Weinheim, Germany
Volume :
4 (2007)
Pages :
2720-2723
Peer reviewed :
Peer reviewed
Available on ORBilu :
since 05 March 2015

Statistics


Number of views
87 (0 by Unilu)
Number of downloads
0 (0 by Unilu)

Scopus citations®
 
12
Scopus citations®
without self-citations
6
OpenCitations
 
11
WoS citations
 
11

Bibliography


Similar publications



Contact ORBilu