New approaches for growth control of GaN-based HEMT structure

This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development discussed [1]. The development leads to a greatly improved observation of growth parameter influences in the MOVPE of GaN. A new growth process is introduced which enhances growth reproducibility [2]. This new growth process is then optimized with respect to the envisaged application. To this end process modeling will be employed. The application envisaged is the AlxGa1−xN/GaNhigh electron mobility transistor (HEMT). At last device results will be presented. All in all it will be shown how fundamental research can drive technology and how basic knowledge can be employed forprocess development with respect to device applications.