[en] The performance optimization of GaAs-based photomixers using novel device structures is reported. Lowtemperature grown (LT) GaAs devices with recessed interdigitated finger contacts, which improve the electric field distribution in the active region, were investigated. Further, the devices with an enhancedmixing area using finger contacts integrated into the coplanar stripline were experimentally verified. The output power of such photomixers was twice of that with conventional surface contacts. High-energy nitrogen implanted GaAs was used as an alternative to LT GaAs, and a further increase of the output power was observed.Measured power level of 2.6 μW at 850 GHz was higher than that reported before for any photomixer in the THz region.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-359
Auteur, co-auteur :
Kordoš, P.; Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia, and Department of Microelectronics, Technical University, 81219 Bratislava, Slovakia
MARSO, Michel ; Institute of Bio- and Nanosystems, Research Center Jülich
Mikulics, M.; Institute of Bio- and Nanosystems, Research Center Jülich, 52425 Jülich, Germany, and Institute of High-Frequency Engineering, Technical University, 38106 Braunschweig, Germany
Langue du document :
Anglais
Titre :
Performance optimization of GaAs-based photomixers as sources of THz radiation
Date de publication/diffusion :
2007
Titre du périodique :
Applied Physics A : Materials Science & Processing
ISSN :
0947-8396
Maison d'édition :
Springer Science & Business Media B.V., New York, Etats-Unis - New York
