Reference : Investigation on Localized States in GaN Nanowires

	Document type :	Scientific journals : Article
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/20270

Title :	Investigation on Localized States in GaN Nanowires
Language :	English
Author, co-author :	Polenta, L. [CNISM and Physics Department, University of Bologna, V.le Berti-Pichat 6/2, 40127 Bologna, Italy]
	Rossi, M. [CNISM and Physics Department, University of Bologna, V.le Berti-Pichat 6/2, 40127 Bologna, Italy]
	Cavallini, Anna [CNISM and Physics Department, University of Bologna, V.le Berti-Pichat 6/2, 40127 Bologna, Italy]
	Calarco, Raffaella [> >]
	Marso, Michel [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Meijers, R. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Richter, T. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Stoica, T. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
	Lüth, H. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Publication date :	2008
Journal title :	ACS Nano
Publisher :	American Chemical Society
Volume :	2
Pages :	287-292
Peer reviewed :	Yes (verified by ORBilu)
ISSN :	1936-0851
e-ISSN :	1936-086X
City :	Washington
Country :	DC
Keywords :	[en] nanowires ; gallium nitride ; spectral photoconductivity ; yellow band
Abstract :	[en] GaN nanowires with diameters ranging between 50 and 500 nm were investigated by electrical and photoinduced current techniques to determine the influence of their size on the opto-electronic behavior of nanodevices. The conductivity, photoconductivity, and persistent photoconductivity behavior of GaN nanowires are observed to strongly depend on the wire diameter. In particular, by spectral photoconductivity measurements, three main sub-band-gap optoelectronic transitions were detected, ascribed to the localized states giving rise to the characteristic blue, green, and yellow bands of GaN. Photoconductivity with below-band-gap excitation varies orders of magnitude with the wire diameter, similarly to that observed for near-band-edge excitation. Moreover, yellow-band-related signal shows a superlinear behavior with respect to the band-edge signal, offering new information for the modeling of the carrier recombination mechanism along the nanowires. The photoconductivity results agree well with a model which takes into account a uniform distribution of the localized states inside the wire and their direct recombination with the electrons in the conduction band.
Permalink :	http://hdl.handle.net/10993/20270

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