[en] The influence of n-doping on the electrical transport properties of GaN nanowires is investigated by photoconductivity measurements on wires with different diameters. The electrical transport in nanowires is extremely sensitive to the wire diameter because of the size dependent barrier for surface recombination. This effect is used to determine the doping level of the nanowires and to complete and consolidate our previously developed surface recombination model for GaN nanowires.
Disciplines :
Ingénierie électrique & électronique
Identifiants :
UNILU:UL-ARTICLE-2009-235
Auteur, co-auteur :
RICHTER, T. ; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Lüth, H.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Meijers, R.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Calarco, Raffaella; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
MARSO, Michel ; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Langue du document :
Anglais
Titre :
Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements
Date de publication/diffusion :
2008
Titre du périodique :
Nano Letters
ISSN :
1530-6984
eISSN :
1530-6992
Maison d'édition :
American Chemical Society, Washington, Etats-Unis - District de Columbia
