[en] We present acoustic charge transport in GaN nanowires (GaN NWs). The GaN NWs were grown by molecular beam epitaxy (MBE) on silicon(111) substrates. The nanowires were removed from the silicon substrate, aligned using surface acoustic waves (SAWs) on the piezoelectric substrate LiNbO3 and finally contacted by electron beam lithography. Then, a SAW was used to create an acoustoelectric current in the GaN NWs which was detected as a function of radio-frequency (RF) wave frequency and its power. The presented method and our experimental findings open up a route towards new acoustic charge transport nanostructuredevices in a wide bandgap material such as GaN.
Disciplines :
Electrical & electronics engineering
Identifiers :
UNILU:UL-ARTICLE-2009-241
Author, co-author :
Ebbecke, J.; Experimentalphysik I, Institut für Physik der Universität Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany and School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, EH14 4AS, UK
Maisch, S.; Experimentalphysik I, Institut für Physik der Universität Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany
Wixforth, A.; Experimentalphysik I, Institut für Physik der Universität Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany
Calarco, Raffaella; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Meijers, R.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Marso, Michel ; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
Lüth, H.; Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany
