[en] We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based
nano-LEDs designed for operation in the single photon lithography
technique. The band edge luminescence energy of the III-nitride nano-LEDs
depends linearly on the structure size. Our studies provide clear evidence that
our technological process for the vertically integrated nano-LED emitters is
perfectly suited for long term operation without any indication of degradation
effects. This novel technology shows strong potential for a future flexible
single photon lithography [1] which is applicable for molecular photonic and
electronic circuits.
Disciplines :
Ingénierie électrique & électronique
Auteur, co-auteur :
Trellenkamp, Stefan; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Mikulics, Martin; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Winden, Andreas; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
Arango, Y. C.
Moers, Jürgen; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany
MARSO, Michel ; University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit
Grützmacher, Detlev
Hardtdegen, Hilde
Langue du document :
Anglais
Titre :
III-nitride nano-LEDs for single photon lithography
