Reference : Novel Double-Level-T-Gate Technology

	Document type :	Scientific congresses, symposiums and conference proceedings : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/10993/18641

Title :	Novel Double-Level-T-Gate Technology
Language :	English
Author, co-author :	Fox, Alfred [eter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Mikulics, Martin [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Hardtdegen, Hilde [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Trellenkamp, Stefan [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Arango, Y. C. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Grützmacher, Detlev [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
	Sofer, Zdenĕk [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, 166 28 Prague 6,Czech Republic]
	Gregušová, Dagmar [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic]
	Novák, Jozef []
	Kordoš, Peter [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
	Marso, Michel [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Publication date :	Oct-2014
Main document title :	Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems
Peer reviewed :	No
On invitation :	No
Audience :	International
ISBN :	978-1-4799-5474-2
Event name :	10th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM 2014
Event date :	from 20-10-2014 to 22-10-2014
Event organizer :	Slovak University of Technology in Bratislava
Event place (city) :	Smolenice
Event country :	Slovakia
Abstract :	[en] We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 μm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.
Target :	Researchers ; Professionals ; Students
Permalink :	http://hdl.handle.net/10993/18641

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