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InP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength
Horstmann, M.; Marso, Michel; Fox, A. et al.
1995 • In Applied Physics Letters, 67 (1995), p. 106-108

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024_APL_67_1995_106_108.pdf

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